Hot-Carrier Reliability of P-MOSFET with Ultra-Thin Silicon Nitride Gate Dielectric
نویسندگان
چکیده
The degradation of 100 nm effective channel length pMOS transistors with 14 A equivalent oxide thickness JVD Si3N4 gate dielectric under hot-carrier stress is studied. Interface-state generation is identified as the dominant degradation mechanism. Hot-carrier-induced gate leakage may become a new reliability concem. Hot-carrier reliability of 14 A Si3N4 transistors is compared to reliability of 16 A Si02 transistors.
منابع مشابه
Intrinsic Reliability Projections for a Thin JVD Silicon Nitride Gate Dielectric in P-MOSFET
A comprehensive study of the intrinsic reliability of a 1.4-nm (equivalent oxide thickness) JVD Si3N4 gate dielectric subjected to constant-voltage stress has been conducted. The stress leads to the generation of defects in the dielectric. As the result, the degradation in the threshold voltage, subthreshold swing, gate leakage current, and channel mobility has been observed. The change in each...
متن کاملHigh mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures Citation
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Complementary metal–oxide–semiconductor compatible athermal silicon nitride/titanium dioxide hybrid micro-ring reso...
متن کاملMaking Silicon Nitride Film a Viable Gate Dielectric
To extend the scaling limit of thermal SiO2 in the ultrathin regime when the direct tunneling current becomes significant, members of this author’s research team at Yale University, in collaboration with the Jet Process Corporation, embarked on a program to explore the potential of silicon nitride as an alternative gate dielectric. In this paper, highquality silicon nitride (or oxynitride) film...
متن کاملImprovement of a Nano-scale Silicon on Insulator Field Effect Transistor Performance using Electrode, Doping and Buried Oxide Engineering
In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...
متن کاملThe Performance and Reliability of PMOSFET’s with Ultrathin Silicon Nitride/Oxide Stacked Gate Dielectrics with Nitrided Si-SiO2 Interfaces Prepared by Remote Plasma Enhanced CVD and Post-Deposition Rapid Thermal Annealing
Ultrathin ( 1.9 nm) nitride/oxide (N/O) dual layer gate dielectrics have been prepared by the remote plasma enhanced chemical vapor deposition (RPECVD) of Si3N4 onto oxides. Compared to PMOSFET’s with heavily doped p-poly-Si gates and oxide dielectrics, devices incorporating the RPECVD stacked nitrides display reduced tunneling current, effectively no boron penetration and improved interface ch...
متن کامل